System level design and analysis of a fourth‐order continuous‐time delta‐sigma modulator using relaxed gain‐band‐width amplifiers

In this paper, based on mathematical approaches and behavioral modeling of internal blocks, an algorithm of designing a continuous‐time delta‐sigma modulator (CT ΔΣM) with aggressive noise shaping is discussed. Using proposed methods, the coefficients of modulator can be calculated directly while the finite gain‐band‐width of amplifiers and rise/fall time of digital‐to‐analog convertors (DACs) in feedback path are included in the transfer function of CT loop filter. To decrease the number of amplifiers, a unique resonator is proposed. Also, an extra feedback DAC is introduced to further reduction of gain‐band‐width requirement of last amplifier. To verify the effectiveness of proposed methods, a fourth‐order, single loop, CT ΔΣM that benefits proportional‐integrator element for compensation of excess‐loop‐delay is realized in system and behavioral circuit levels. It has a 4‐bit quantizer, over‐sampling‐ratio of 10, and out‐of‐band‐gain of 12 dB. The peaking in signal‐transfer‐function is alleviated using a feed‐forward capacitor along with proper choosing of rest coefficients. The designed modulator has 78‐dB signal‐to‐noise‐ratio; even the non‐ideal behaviors of amplifiers and DACs are involved in simulations. Independent to sampling frequency, the proposed methods can be applied to other topologies of CT ΔΣMs. Copyright © 2017 John Wiley & Sons, Ltd.     

Harmonic fold back reduction at the N‐path filters

In this paper, a method is proposed to reduce harmonic fold back (HFB) problem of N‐path filters, without increasing the input reference clock (f_CLK ) frequency. The HFB at the N‐path filter is analyzed, and simple expressions are extracted to model this problem. Using the results of the analysis, an M‐of‐N‐path filter has been proposed that behaves like an M × N‐path filter in terms of HFB problem; however, the f_CLK frequency of this structure is the same as an N‐path filter. To demonstrate the feasibility of the proposed idea, a 3‐of‐4‐path filter is designed, and its characteristics are compared with 4‐path and 12‐path filters by simulation. Impacts of different non‐idealities like clock‐phase error, mismatch, and parasitic capacitance are investigated. The transistor‐level implementation of this filter is performed in 0.18 µm Complementary Metal Oxide Semiconductor (CMOS) technology. The simulation results show that the filter has the pass‐band gain of 17 dB, tuning range of 0.2–1.2 GHz, −3 dB bandwidth of 25 MHz, quality factor of 8–48, 18 dB out‐of‐band rejection, 16 dB rejection of the third harmonic of switching frequency (f_s ), and the noise figure of 4.35 dB (using ideal G_m cells) and 6.95 dB (for practical G_m cells). The strongest harmonic folding to the filter pass‐band occurs around 11f_s with the attenuation of 23.8 dB. Each G_m cell draws about 12.4 mA from 1.8 V supply, and the out‐of‐band IIP3 and P _{1 dB,CP} are 17 and 4 dBm, respectively. Copyright © 2016 John Wiley & Sons, Ltd.     

低低温电除尘器对粉尘特性和SO3脱除效果影响分析

分析了低低温除尘技术对粉尘特性和SO₃脱除效果的影响,说明低低温除尘器通过降低粉尘比电阻来改善粉尘的荷电能力,有效地提高了除尘效果;同时增大粉尘平均粒径,有利于提高脱硫系统协同除尘效果;另外湿法脱硫系统本身不具备较高的SO₃去除率,低低温电除尘器和湿式电除尘器对SO₃的去除率可达到80%左右,因此,低低温电除尘器和湿式电除尘器可作为控制SO₃的有效技术手段。     

3D打印数字人像快速成型技术的研究与实现

自动获取人像数据并高精度重建是三维人脸识别的研究热点。针对三维重构缺少成熟算法与有效应用方法的问题,提出了一种基于二维数据的三维打印数字人像快速成型方法。该方法采用二维照相的方法获取人像的正视图、侧视图和俯视图,使用MAYA软件对人像数据进行网格化处理,生成OBJ文件导入PROE生成三维实体,并导入JDpaint实现数控仿真加工,最后将STL文档导入打印机打印出三维人像。实验证明,该方法实现了数据获取、网格划分、曲面重建和快速成型的整个工作流程。     

一种表面-内置式永磁转子同步电机三维全域温度场分析

针对表面-内置式永磁转子同步电机(SIPMSM)具有结构紧凑和功率密度高的特点,准确计算SIPMSM各部件的温度分布非常重要。采用电磁场-温度场耦合分析的方法对SIPMSM的三维全域温度场进行计算。建立SIPMSM的电磁场和温度场有限元模型,分析在同步运行速度下负载和永磁体退磁对SIPMSM三维全域温度场的影响,也分析了在额定负载下运行速度对SIPMSM三维全域温度场的影响。通过仿真与实验结果的对比分析,验证了样机模型的合理性和计算结果的正确性。     

一种模块化级联H桥构造的三相—单相同相牵引供电系统

为解决高速、重载电气化铁路负序、谐波和无功等电能质量问题,依据三相对称补偿理论,并结合H桥构造,提出了基于模块化级联H桥的三相—单相同相牵引供电系统。分析了系统补偿特性及工作原理,研究了直挂型"!"联结的有源补偿装置(MMCHC)拓扑结构,推导了子模块参数确定方法,并给出了系统控制策略。通过直挂补偿装置将三相牵引变压器转换为单相供电,节省了匹配变压器的容量为补偿容量的2倍。仿真表明,补偿装置在牵引和再生制动工况下均具备良好的补偿特性和动态性能,消除了牵引负荷引起的负序、谐波和无功分量,且子模块电容电压稳定在2%以内。     

氧化钇坩埚对镍三铝基高温合金返回料纯净化熔炼的影响

本文研究了Y2O3坩埚对N3Al基高温合金返回料纯净化熔炼的影响,并对使用Y2O3坩埚和MgO坩埚进行真空感应熔炼的结果进行了对比。结果表明：使用Y2O3坩埚对N3Al基高温合金IC21返回料进行纯净化熔炼有利于降低返回料中的H、N和O含量。和使用MgO坩埚相比分别降低了50%,80%,和80%。最低可以达到0.5 wppm,1 wppm 和2 wppm的数值。当精炼温度高于1550?C或精炼时间超过5分钟时,精炼参数对纯净化熔炼的效果影响很小。     

席夫碱与硝酸铈复配物对1060纯铝的缓蚀作用

采用极化曲线、电化学阻抗谱、扫描电镜和能谱分析,研究合成的3-吡啶-4-氨基-1,2,4-三唑-5-硫酮席夫碱及其复配物硝酸铈在质量分数为3.5%NaCl溶液中对1060纯铝的缓蚀作用。结果表明：在293 K时席夫碱可有效抑制纯铝在3.5%NaCl溶液中的腐蚀,当席夫碱浓度为0.4 g.L_-1时缓蚀率最高,可达76.0%。席夫碱为混合型缓蚀剂,其在1060纯铝表面的吸附符合Langmuir吸附模型,且同时存在物理吸附和化学吸附。0.2 g.L_-1席夫碱与0.03 g.L_-1硝酸铈复配缓蚀率可达88.2%,二者具有协同缓蚀作用。     

阳极氧化钽酸锂薄膜在NaOH溶液中的腐蚀行为研究

通过阳极氧化法在高纯钽片表面制备了钽酸锂复合薄膜,采用浸泡失重法和电化学测试法考察了镀膜前后样品在10% (质量分数) NaOH溶液中的腐蚀行为。利用X射线衍射仪、扫描电子显微镜及能谱仪分别对薄膜的物相组成、表面及截面形貌、膜层厚度进行了测试分析。结果表明,阳极氧化后得到的复合薄膜由钽酸锂和氧化钽组成;该薄膜与基体之间结合良好,厚度约3 μm;镀膜后样品的质量腐蚀速率至少减少了6倍,腐蚀电流密度下降了2个数量级,腐蚀96 h后样品表面没有明显变化。而对比的纯钽样品却发生了严重的腐蚀反应,生成了很多长条状和多棱柱状的腐蚀产物Na₃TaO₄、Na₂Ta₂O₆和Na₈Ta₆O₁₉。     

SiC和Al2O3颗粒对Ti-25Nb-3Mo-3Zr-2Sn合金微磨损行为的影响

本文研究了SiC和Al₂O₃颗粒对生物医用植入材料Ti-25Nb-3Mo-3Zr-2Sn合金的微磨损行为的影响。在文中研究了合金的比磨损率、摩擦系数、磨损机制以及微磨损与腐蚀之间的协同作用。研究结果显示,合金的比磨损率随磨粒尺寸的增加而增加。由于SiC磨粒的硬度和切削性均优于Al₂O₃磨粒,由此在同尺寸磨粒下SiC磨粒所造成的材料的损失比Al₂O₃磨粒造成的要大。摩擦系数的结果显示,在同一种磨粒作用下,Hank’s溶液中所获得的摩擦系数的平均值大于蒸馏水中所获得的摩擦系数平均值,且由于Hank’s溶液的腐蚀性所致在Hank’s溶液中获得的摩擦系数的稳定性要比在蒸馏水中的稳定性差;在同尺寸磨粒下,Al₂O₃磨粒所造成的摩擦系数要大于SiC磨粒所造成的。随磨粒尺寸的减小,磨损机制由三体磨损转变为混合磨损之后再转变为二体磨损。从磨损机制图中可以看出腐蚀对材料损失的贡献是不容小视的,磨损机制为以磨损为主的磨损腐蚀。